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BUK663R5-55C - N-channel TrenchMOS FET

NXP Semiconductors

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Datasheet Details

Part number	BUK663R5-55C
Manufacturer	NXP Semiconductors
File Size	153.99 KB
Description	N-channel TrenchMOS FET
Datasheet	BUK663R5-55C_NXPSemiconductors.pdf

BUK663R5-55C Product details

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

Features

AEC Q101 compliant.
Suitable for intermediate level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Published: Oct 16, 2010 |