BUK652R6-40C - N-channel TrenchMOS FET

NXP

BUK652R6-40C Description

www.DataSheet4U.com BUK652R6-40C N-channel TrenchMOS FET Rev.01 * 5 July 2010 Objective data sheet 1.Product profile 1.1 General descripti.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK652R6-40C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

📥 Download Datasheet

BUK652R6-40C Datasheet Preview — Preview of BUK652R6-40C PDF

Datasheet Details

Part number: BUK652R6-40C
Manufacturer: NXP ↗
File Size: 165.88 KB
Datasheet: BUK652R6-40C_PhilipsSemiconductors.pdf
Description: N-channel TrenchMOS FET

📁 Related Datasheet

BUK6507-55C - N-Channel MOSFET (NXP Semiconductors)
BUK6507-75C - N-Channel MOSFET (NXP Semiconductors)
BUK653R2-55C - N-Channel MOSFET (NXP Semiconductors)
BUK653R3-30C - N-Channel MOSFET (NXP Semiconductors)
BUK653R4-40C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
BUK653R5-55C - N-Channel MOSFET (NXP Semiconductors)
BUK654R6-55C - N-Channel MOSFET (NXP Semiconductors)
BUK655-500B - N-Channel 600-V Power MOSFET (VBsemi)

📌 All Tags

N-channel TrenchMOS FET NXP

NXP BUK652R6-40C-like datasheet

BUK652R1-30C - N-channel TrenchMOS intermediate level FET
BUK652R3-40C - N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET
BUK652R7-30C - N-channel TrenchMOS intermediate level FET
BUK6510-75C - N-channel TrenchMOS FET
BUK654R0-75C - N-channel TrenchMOS FET
BUK654R8-40C - N-channel TrenchMOS intermediate level FET