BUK652R1-30C - N-channel TrenchMOS intermediate level FET

NXP

BUK652R1-30C Description

www.DataSheet4U.com BUK652R1-30C N-channel TrenchMOS intermediate level FET Rev.01 * 5 July 2010 Objective data sheet 1.Product profile 1..
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK652R1-30C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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Datasheet Details

Part number: BUK652R1-30C
Manufacturer: NXP ↗
File Size: 149.92 KB
Datasheet: BUK652R1-30C_PhilipsSemiconductors.pdf
Description: N-channel TrenchMOS intermediate level FET

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N-channel TrenchMOS intermediate level FET NXP

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