Datasheet Details
- Part number
- BUK653R3-30C
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 154.46 KB
- Datasheet
- BUK653R3-30C-NXPSemiconductors.pdf
- Description
- N-Channel MOSFET
BUK653R3-30C Description
TO-220AB BUK653R3-30C N-channel TrenchMOS intermediate level FET Rev.1 * 13 July 2011 Product data sheet 1.Product profile 1.1 General.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
BUK653R3-30C Features
* AEC Q101 compliant
* Suitable for standard and logic level
gate drive sources
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