BLL8H1214LS-500 Description
BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev.2 * 9 February 2015 Product data sheet 1.Product profile 1.1 Gene.
500 W LDMOS power transistor intended for L-band radar applications in the 1.
BLL8H1214LS-500 Features
* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (1.2 GHz to 1.4 GHz)
* Internally matched for ease of
BLL8H1214LS-500 Applications
* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal
f
VDS
PL
Gp
D tr
tf
(GHz)
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
1.2 to 1.4
50 500 17
50 20
6
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