BLL1214-250 - L-band radar LDMOS transistor

Datasheet Details

Part number	BLL1214-250
Manufacturer	NXP
File Size	79.30 KB
Description	L-band radar LDMOS transistor
Datasheet	BLL1214-250_PhilipsSemiconductors.pdf

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

High power gain.
Easy power control.
Excellent ruggedness.
Source on mounting base eliminates DC isolators, reducing common mode inductance.

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Published: Mar 23, 2005 |