BLL1214-250R - LDMOS L-band radar power transistor

NXP Semiconductors

Datasheet Details

Part number	BLL1214-250R
Manufacturer	NXP Semiconductors
File Size	163.24 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL1214-250R_NXPSemiconductors.pdf

Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 %.
High power gain.
Easy power control.
Excellent ruggedness.
Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3.

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Published: Jun 18, 2010 |