BLL6H0514L-130_NXPSemiconductors.pdf
Datasheet Details
Part number:
BLL6H0514LS-130, BLL6H0514L-130
Manufacturer:
NXP ↗ Semiconductors
File Size:
319.76 KB
Description:
Ldmos driver transistor.
Note:
This datasheet PDF includes multiple part numbers: BLL6H0514LS-130, BLL6H0514L-130.
Please refer to the document for exact specifications by model.
BLL6H0514LS-130, BLL6H0514L-130, LDMOS driver transistor
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1.
Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10
BLL6H0514LS-130 Features
* Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant
📁 Related Datasheet
📌 All Tags
