Datasheet Details
- Part number
- BLF642
- Manufacturer
- NXP ↗
- File Size
- 211.50 KB
- Datasheet
- BLF642-NXP.pdf
- Description
- Broadband power LDMOS transistor
BLF642 Description
BLF642 Broadband power LDMOS transistor Rev.2 * 22 July 2011 Product data sheet 1.Product profile 1.1 General .
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
BLF642 Features
* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :
* Average output power = 35 W
* Power gain = 19 dB
* Drain efficiency = 63 %
* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain cur
BLF642 Applications
* The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation
f
VDS
PL
(
📁 Related Datasheet
📌 All Tags