BLF6G10L-40BRN - Power LDMOS transistor

Description

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

• Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: ‹ Average output power (PL(AV)) = 2.5 W ‹ Power gain (Gp) = 23.0 dB ‹ Drain efficiency (ηD) = 15.0 % ‹ ACPR =.
• 42.5 dBc.
• Easy power control.
• Integrated ESD protection.
• Enhanced ruggedness.
• High efficiency.
• Excellent thermal stability.
• Designed for broadband operation (728 MHz to 960 MHz).
• Intern.