BLF6G10L-40BRN - Power LDMOS transistor

NXP Semiconductors

📥 Download Datasheet

BLF6G10L-40BRN Datasheet Preview — Preview of BLF6G10L-40BRN PDF

Datasheet Details

Part number	BLF6G10L-40BRN
Manufacturer	NXP Semiconductors
File Size	327.49 KB
Description	Power LDMOS transistor
Datasheet	BLF6G10L-40BRN_NXPSemiconductors.pdf

BLF6G10L-40BRN Product details

Description

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. 42.5 Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTION This device is sen

Features

Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR =.
42.5 dBc.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (728 MHz to 960 MHz).
Intern.

📁 BLF6G10L-40BRN Similar Datasheet

BLF6G10LS-200RN - Power LDMOS transistor (Ampleon)
BLF6G10-200RN - Power LDMOS transistor (Ampleon)
BLF6G10-45 - Power LDMOS Transistor (NXP)
BLF6G10S-45 - Power LDMOS Transistor (NXP)
BLF6G13L-250P - Power LDMOS transistor (Ampleon)
BLF6G13LS-250P - Power LDMOS transistor (Ampleon)
BLF6G13LS-250PG - Power LDMOS transistor (Ampleon)
BLF6G15L-500H - Power LDMOS transistor (Ampleon)

Other Datasheets by NXP Semiconductors

BLF6G10LS-135R - Power LDMOS transistor
BLF6G10LS-200 - Power LDMOS transistor
BLF6G10LS-200R - Power LDMOS transistor
BLF6G20-110 - Power LDMOS transistor
BLF6G20-180PN - Power LDMOS transistor
BLF6G20-230PRN - Power LDMOS transistor

Published: Oct 23, 2010 |