BLF6G10LS-135R - Power LDMOS transistor

NXP Semiconductors

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Datasheet Details

Part number	BLF6G10LS-135R
Manufacturer	NXP Semiconductors
File Size	134.06 KB
Description	Power LDMOS transistor
Datasheet	BLF6G10LS-135R_NXPSemiconductors.pdf

BLF6G10LS-135R Product details

Description

135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTION This device is sens

Features

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efﬁciency = 28.0 % N ACPR =.
39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of.

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Published: Jul 29, 2009 |