Datasheet Details
- Part number
- BLF640
- Manufacturer
- NXP ↗
- File Size
- 130.94 KB
- Datasheet
- BLF640-NXP.pdf
- Description
- Broadband power LDMOS transistor
BLF640 Description
BLF640 Broadband power LDMOS transistor Rev.2 * 11 April 2013 Product data sheet 1.Product profile 1.1 General .
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz
Table 1.
BLF640 Features
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* No internal matching for broadband operation
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applicatio
BLF640 Applications
* at frequencies from HF to 2200 MHz
Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7 18.5 15
1-carrier W-CDMA 2110 to 2170 28
2
19.3
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