BLA6H1011-600 Datasheet - NXP

BLA6H1011-600 LDMOS avionics power transistor

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 1030 to 1090 .

BLA6H1011-600 Features

* Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 %

* Easy power control

* Integrated ESD protection

* High fle

BLA6H1011-600 Datasheet (163.57 KB)