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BGF944 - GSM900 EDGE power module

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NXP

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BGF944 GSM900 EDGE power module by NXP - Datasheet Preview — Datasheet preview – BGF944

Datasheet Details

Part number	BGF944
Manufacturer	NXP
File Size	91.74 KB
Description	GSM900 EDGE power module
Datasheet	BGF944 Datasheet
Additional preview pages of the BGF944 datasheet.

Product details

Description

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band. 65(1) Fig.1 Simplified outline.

Features

Typical GSM EDGE performance at a supply voltage of 26 V:.
Output power = 2.5 W.
Gain = 29 dB.
Efficiency = 15%.
ACPR <.
65 dBc at 400 kHz.
rms EVM < 0.4%.
peak EVM < 1.2%.
Low distortion to a GSM EDGE signal.
Excellent 2-tone performance.
Low die temperature due to copper flange.
Integrated temperature compensated bias.
50 Ω input/output impedance.
Flat gain over frequen.

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Published: Mar 23, 2005 |