BGF1801-10 - GSM1800 EDGE power-module

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NXP

BGF1801-10 GSM1800 EDGE power-module by NXP - Datasheet Preview — Datasheet preview – BGF1801-10

Datasheet Details

Part number	BGF1801-10
Manufacturer	NXP
File Size	123.88 KB
Description	GSM1800 EDGE power-module
Datasheet	BGF1801-10 Datasheet
Additional preview pages of the BGF1801-10 datasheet.

Product details

Description

10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band. DESCRIPTION f (MHz) 1805 to 1880 1805 to 1880 VS (V) 26 26 PL (W) 10 3.5 Gp (dB) 25.5 26.5 η (%) 34 19 Top view 1 BGF1801-10 PINNING - SOT365C PIN 1 2 3 Flange RF input

Features

Typical GSM EDGE performance at a supply voltage of 26 V:.
Output power = 3.5 W.
Gain = 26.5 dB.
Efficiency = 19%.
ACPR <.
63 dBc at 400 kHz.
rms EVM < 1.2%.
peak EVM < 3.6%.
Low distortion to CDMA signals.
Excellent 2-tone performance.
Low die temperature due to copper flange.
Integrated temperature compensated bias.
50 Ω input/output impedance.
Flat gain over frequency.

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Published: Jan 19, 2007 |