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BGF844 - GSM800 EDGE power module

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NXP

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BGF844 GSM800 EDGE power module by NXP - Datasheet Preview — Datasheet preview – BGF844

Datasheet Details

Part number	BGF844
Manufacturer	NXP
File Size	91.19 KB
Description	GSM800 EDGE power module
Datasheet	BGF844 Datasheet
Additional preview pages of the BGF844 datasheet.

Product details

Description

23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band. 65(1) Fig.1 Simplified outline.

Features

Typical GSM EDGE performance at a supply voltage of 26 V:.
Output power = 2.5 W.
Gain = 30 dB.
Efficiency = 16%.
ACPR <.
65 dBc at 400 kHz.
rms EVM < 0.4%.
peak EVM < 1.2%.
Low distortion to a GSM EDGE signal.
Excellent 2-tone performance.
Low die temperature due to copper flange.
Integrated temperature compensated bias.
50 Ω input/output impedance.
Flat gain over frequen.

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Published: Mar 23, 2005 |