BF998WR Datasheet (NXP) - N-channel dual-gate MOS-FET

BF998WR, N-channel dual-gate MOS-FET

Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected.

The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

CAUTION The device is supplied in an antistatic

BF998WR Features

* High forward transfer admittance

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

* VHF and UHF applications with 12 V supply voltage, such as television tuner