BF992 Datasheet - NXP

BF992 Silicon N-channel dual gate MOS-FET

Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b.

BF992 Silicon N-channel dual gate MOS-FET Rev. 04 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com u.

BF992 Features

* d, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reas

BF992 Datasheet (234.60 KB)