BF999 Datasheet (Siemens Semiconductor Group) - Silicon N-Channel MOSFET Triode

BF999, Silicon N-Channel MOSFET Triode

Silicon N Channel MOSFET Triode q BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type BF 999 Marking LB Ordering Code (tape and reel) Q62702-F1132 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - ambient 2) Rth JA ≤ Symbol VDS ID ± Values 20 30 10 200 Unit V mA