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BF909R - N-channel dual gate MOS-FET

Product Overview

NXP

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BF909R N-channel dual gate MOS-FET by NXP - Datasheet Preview — Datasheet preview – BF909R

Datasheet Details

Part number	BF909R
Manufacturer	NXP
File Size	306.51 KB
Description	N-channel dual gate MOS-FET
Datasheet	BF909R Datasheet
Note	This datasheet PDF includes multiple part numbers: BF909R, BF909. Please refer to the document for exact specifications by model.
Additional preview pages of the BF909R datasheet.

Product details

Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

Features

Specially designed for use at 5 V supply voltage.
High forward transfer admittance.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

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Other Datasheets by NXP

BF909 - N-channel dual gate MOS-FET
BF909WR - N-channel dual-gate MOS-FET
BF901 - Silicon n-channel dual gate MOS-FETs
BF901R - Silicon n-channel dual gate MOS-FETs
BF904 - N-channel dual gate MOS-FETs
BF904A - N-channel dual gate MOS-FETs

Published: Jul 24, 2024 |