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PMDPB55XP - dual P-channel Trench MOSFET

Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction 1.3.

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Datasheet Details

Part number PMDPB55XP
Manufacturer NXP Semiconductors
File Size 314.96 KB
Description dual P-channel Trench MOSFET
Datasheet download datasheet PMDPB55XP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDPB55XP 020 -6 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DF N2 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC/DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.4 Quick reference data Table 1.
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