BLF645 - Broadband power LDMOS transistor

NXP Semiconductors

Datasheet Details

Part number	BLF645
Manufacturer	NXP Semiconductors
File Size	195.07 KB
Description	Broadband power LDMOS transistor
Datasheet	BLF645_NXPSemiconductors.pdf

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W Power gain = 18 dB Drain efficiency = 45 % Intermodulation distortion =.
32 dBc.
Integrated ES.

📁 BLF645 Similar Datasheet

Other Datasheets by NXP Semiconductors

Published: Mar 13, 2010 |