Description
S7B163635M SS77BB116613863355MM S7B161835M 512Kx36 & 1Mx18 Flow-Through SRAM 512Kx36 & 1Mx18 Flow-Through SRAM 18Mb Sync.Flow-Through SRAM Specific.
The S7B163635M and S7B161835M are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance.
Features
* VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply
* VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or
2.3V~3.5V I/O Power Supply (VDD=3.3V)
* Synchronous Operation
* Self-Timed Write Cycle
* On-Chip Address Counter and Control Registers
* Byte
Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address
