Description
The µPA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Single chip type.
- Low On-state Resistance
1.44
5 5 5 5
RDS(on)1 = 14 mΩ (TYP. ) (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ (TYP. ) (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 19 mΩ (TYP. ) (VGS = 4.0 V, ID = 5.0 A).
- Low Ciss : Ciss = 2400 pF (TYP. ).
- Built-in G-S protection diode.
- Small and surface mount package (Power SOP8)
1.8 Max. 1 5.37 Max. 4
6.0 ±0.3 4.4
+0.10.
- 0.05
0.8
0.15
0.05 Min. 0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10.
UPA1727_NEC.pdf
