Description
The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
Features
- Low on-resistance
1.8 MAX.
- Small and surface mount package (Power SOP8)
0.05 MIN.
- Built-in G-S protection diode
0.15.
- Low Ciss: Ciss = 980 pF TYP. +0.10.
- 0.05.
- RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A)
1.44
RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A)
1 5.37 MAX. 4
6.0 ±0.3 4.4 0.8
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10.
- 0.05
0.12 M.
UPA1722_NEC.pdf
