Description
This µPA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.
Features
- 2.5-V gate drive and low on-resistance
1.8 MAX.
- Built-in G-S protection diode.
- Small and surface mount package (Power SOP8)
0.05 MIN.
- Low Ciss : Ciss = 950 pF TYP. 0.15.
- RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
+0.10.
- 0.05.
- 1.44
RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)
1 5.37 MAX. 4
6.0 ±0.3 4.4 0.8
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10.
UPA1725_NEC.pdf
