Description
The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management 5 applications of notebook computers and so on.
Features
- 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) 5 5
1.44
RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)
1.8 MAX. 1 5.37 MAX. 4
6.0 ±0.3 4.4
+0.10.
- 0.05
RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A).
- Low Ciss: Ciss = 2700 pF TYP.
- Built-in G-S protection diodes.
- Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN. 0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10.
- 0.05
0.12 M.
UPA1726_NEC.pdf
