Description
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR .
E n ot T t n O r .
Features
* HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
* LOW NOISE FIGURE: 1.1 dB at 1 GHz
* HIGH COLLECTOR CURRENT: 100 mA
* HIGH RELIABILITY METALLIZATION
* LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4
Applications
* Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base s