NE856 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC

Description

NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIE.
NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications.

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Datasheet Specifications

Part number: NE856
Manufacturer: NEC
File Size: 1.07 MB
Datasheet: NE856_NEC.pdf
Description: NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
* LOW NOISE FIGURE: 1.1 dB at 1 GHz
* HIGH COLLECTOR CURRENT: 100 mA
* HIGH RELIABILITY METALLIZATION

Applications

* Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base s

NE856 Distributors

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NE856 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC

NEC NE856-like datasheet