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NE85633 - NPN Silicon RF Transistor

Features

  • Low noise and high gain : NF = 1.1 dB TYP. , Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz.
  • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz.

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Datasheet Details

Part number NE85633
Manufacturer Renesas
File Size 1.44 MB
Description NPN Silicon RF Transistor
Datasheet download datasheet NE85633 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011 FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP.
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