NCEAP40P80K - Automotive P-Channel Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCEAP40P80K
Manufacturer	NCE Power Semiconductor
File Size	392.88 KB
Description	Automotive P-Channel Power MOSFET
Datasheet	NCEAP40P80K Datasheet
Additional preview pages of the NCEAP40P80K datasheet.

The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =-40V,ID =-95A RDS(ON)=7.2mΩ (typical) @ VGS=-10V RDS(ON)=11mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.
100% ΔVds tested.
AEC-Q101 qualified.

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Published: Nov 4, 2025 |