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NCE2302C - N-Channel Enhancement Mode Power MOSFET

Description

The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = 3 A RDS(ON) < 80mΩ @ VGS=2.5V RDS(ON) < 50mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number NCE2302C
Manufacturer NCE Power Semiconductor
File Size 242.13 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2302C Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2302C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 3 A RDS(ON) < 80mΩ @ VGS=2.5V RDS(ON) < 50mΩ @ VGS=4.
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