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NCE0218F - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE0218F N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE0218F

Datasheet Details

Part number	NCE0218F
Manufacturer	NCE Power Semiconductor
File Size	379.74 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0218F Datasheet
Additional preview pages of the NCE0218F datasheet.

Product details

Description

The NCE0218F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 6, 2015 |