NCE01P18D - P-Channel Enhancement Mode Power MOSFET

Description

The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Features

VDS =-100V,ID =-18A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE01P18D
Manufacturer	NCE Power Semiconductor
File Size	304.67 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01P18D Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.

Published: Jun 2, 2018 |