MTB4N80E1 Datasheet (Motorola)

MTB4N80E1, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

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MTB4N80E1 Features

* able with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800