MTB4N80E Datasheet (Motorola)

MTB4N80E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.

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MTB4N80E Features

* ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were