MTB1306 Datasheet - Motorola

MTB1306 TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1306/D Advance Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high cell density HDTM.

MTB1306 Features

* 000 0

* 10 VDS = 0 V Ciss VGS = 0 V Crss Ciss Coss Crss

* 5.0 VGS 0 VDS 5.0 10 15 20 25 VGS OR VDS, GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTB1306 VGS

MTB1306 Datasheet (176.55 KB)

MTB1306 Datasheet Preview — Preview of MTB1306 PDF

Datasheet Details

Part number:

MTB1306

Manufacturer:

Motorola

File Size:

176.55 KB

Description:

Tmos power fet.

📁 Related Datasheet

MTB1306 Power MOSFET (ON Semiconductor)

MTB10000 LED Lamp Arrays (Marktech Corporate)

MTB10010U NPN microwave power transistor (NXP)

MTB10062 Bi-Color LED Lamp Array (Marktech Corporate)

MTB100A06KRH8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)

MTB100A10KRH8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB100A10KRQ8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB100N10RKJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

TAGS

MTB1306 TMOS POWER FET Motorola

MTB1306 Distributor