MTB1306 Datasheet (Motorola)

MTB1306, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1306/D Advance Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.

This advanced high cell density HDTM

MTB1306 Features

* 000 0

* 10 VDS = 0 V Ciss VGS = 0 V Crss Ciss Coss Crss

* 5.0 VGS 0 VDS 5.0 10 15 20 25 VGS OR VDS, GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTB1306 VGS