MTB100A06KRH8 - Dual N-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Part number	MTB100A06KRH8
Manufacturer	CYStech
File Size	858.46 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB100A06KRH8-CYStech.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 11.3A 7.1A 3.2A 2.6A 82mΩ(typ) 116mΩ(typ) 183mΩ(typ) Equivalent Circuit MTB100A06KRH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source.

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Published: Mar 7, 2020 |