MTB100N10RKJ3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB100N10RKJ3
Manufacturer	Cystech Electonics
File Size	348.08 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB100N10RKJ3-CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
ESD protected gate.
Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB100N10RKJ3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly.

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Published: Oct 28, 2016 |