MRF9080 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTORS

MRF9080, RF POWER FIELD EFFECT TRANSISTORS

4.7 pF Chip Capacitor, B Case 2.7 pF Chip Capacitor, B Case 1.5 pF Chip Capacitor, B Case 5.6 pF Chip Capacitors, B Case 22 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors, B Case 0.8 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 1.0 kΩ, ??? W Chip Res

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.datasheet4u.com of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

Typical Performance for GSM Frequencies, 92

MRF9080 Features

* F9080SR3 MRF9080LSR3 9 NOTES www.datasheet4u.com MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 1 2X Q bbb M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS M