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MRF901 - NPN SILICON RF TRANSISTOR

Description

gain.

Low noise small-signal amplifiers.

Applications up to 2.5 GHz.

Features

  • Low Noise Figure.
  • High Gain.
  • Common Emitter.

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Datasheet Details

Part number MRF901
Manufacturer ASI
File Size 31.31 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet MRF901 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF901 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF901 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.5 GHz. FEATURES: • Low Noise Figure • High Gain • Common Emitter MAXIMUM RATINGS IC 30 mA VCBO 25 V VCEO 15 V VEBO 2.0 V PDISS 0.375 W @ TC = 75 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C θJC 200 °C/W PACKAGE STYLE Dim. Are in mm Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 0.1 mA BVCEO IC = 1.0 mA BVEBO IE = 0.1 mA ICBO VCB = 15 V hFE VCE = 5.0 V IC = 5.0 mA MINIMUM TYPICAL MAXIMUM 25 15 2.0 50 30 80 200 UNITS V V V nA --- Ccb VCB = 10 V fT VCE = 10 V IC = 15 mA f = 1.0 MHz f = 1.0 GHz 0.40 1.0 pF 4.5 GHz NFMIN VCE = 6.
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