MRF9030LR1 - RF Power Field Effect Transistor

Freescale Semiconductor

Datasheet Details

Part number	MRF9030LR1
Manufacturer	Freescale Semiconductor
File Size	345.55 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF9030LR1-FreescaleSemiconductor.pdf

Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9030 Rev. 8, 9/2008 MRF9030LR1 945 MHz, 30 W, 26 V.

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Published: Mar 23, 2015 |