MRF5S21130 Datasheet (Motorola) - The RF MOSFET Line RF Power Field Effect Transistor

MRF5S21130, The RF MOSFET Line RF Power Field Effect Transistor

10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 µF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Value, P/N or DWG 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 M

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N Channel Enhancement Mode Lateral MOSFETs MRF5S21130S Designed for W CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s .

To b e u s e d i n C l a s s A B f o r P C N P C S / c e l l u l a r

MRF5S21130 Features

* urce Ω 2.87

* j9.49 3.13

* j9.86 4.05

* j10.90 4.80

* j11.75 5.55

* j11.87 Zload Ω 1.51

* j2.97 1.52

* j2.54 1.59

* j2.68 1.62

* j2.70 1.54

* j3.13 Zsource = Test circuit impedance as measured from gate to ground. Zload