MRF5S21130HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

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Datasheet Details

Part number	MRF5S21130HR3
Manufacturer	Freescale Semiconductor
File Size	421.96 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S21130HR3_FreescaleSemiconductor.pdf

MRF5S21130HR3 Product details

Description

10 μF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 μF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Part Number 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 Manufacturer Vishay - Sprague Vishay - Vitramon ATC ATC ATC Philips MRF5S21130HR3 MRF5S21130HSR3 RF Device Data Freescale Semiconductor 3 C1 C3 R1 C9 C11 C13 C15 C20 R2 C5 CUT OUT AREA C18 C7 C8 C6

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21130HR3 MRF5S21130HSR3 2110 - 2170 MHz, 28 W AVG. , 28 V 2 x W - CDMA.

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Published: Oct 18, 2008 |