MRF5S21150R3 Datasheet (Motorola Inc) - RF POWER FIELD EFFECT TRANSISTORS

MRF5S21150R3, RF POWER FIELD EFFECT TRANSISTORS

22 µF, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 µF, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 µF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Value, P/N or DWG TAJE226M035R 100B6R8CW 100B1R8BW 1812Y2

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF5S21150/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

MRF5S21150R3 Features

* br>

* 90

* 100

* 110

* 120

* 25

* ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW

* IM3 @ 3.84 MHz BW

* 20

* 15

* 10

* 5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW Freescale Semiconductor, Inc f, FREQUENCY (MHz) Figure 8. 2 -