MRF555 Datasheet (Motorola) - NPN SILICON RF LOW POWER TRANSISTOR

MRF555, NPN SILICON RF LOW POWER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range.

Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Circuit board photomaster available up