MRF557 Datasheet (Advanced Power Technology) - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF557, RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Designed primarily for wideband large signal stages in the UHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA The

MRF557 Features

* Specified @ 12.5 V, 870 MHz Characteristics

* Output Power = 1.5 W

* Minimum Gain = 8 dB

* Efficiency 60% (Typ)

* Cost Effective PowerMacro Package

* Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G

* G Denotes RoHS Complia