MRF557 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

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Datasheet Details

Part number	MRF557
Manufacturer	Advanced Power Technology
File Size	146.05 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	MRF557-AdvancedPowerTechnology.pdf

MRF557 Product details

Description

Designed primarily for wideband large signal stages in the UHF frequency range.ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75°C Derate above 75°C 3.0 Watts 40 mW/ °C Advanced Power Technology reserves the right to change, without notice, the specifications and information c

Features

Specified @ 12.5 V, 870 MHz Characteristics.
Output Power = 1.5 W.
Minimum Gain = 8 dB.
Efficiency 60% (Typ).
Cost Effective PowerMacro Package.
Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G.
G Denotes RoHS Compliant, Pb Free Terminal Finish Power Macro.

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Published: Dec 11, 2016 |