MRF5015 - N-CHANNEL BROADBAND RF POWER FET

Motorola

Datasheet Details

Part number	MRF5015
Manufacturer	Motorola
File Size	154.23 KB
Description	N-CHANNEL BROADBAND RF POWER FET
Datasheet	MRF5015_Motorola.pdf

of 109 Ω, resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate.
to.
source threshold voltage, V GS(th). Gate Voltage Rating.
Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
The gates of these devices are essentially capacitors. Circuits that leave the gate open.
circu.

📁 MRF5015 Similar Datasheet

MRF501 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
MRF502 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
MRF517 - NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
MRF5174 - NPN RF POWER TRANSISTOR (ASI)
MRF5175 - NPN RF POWER TRANSISTOR (ASI)
MRF5176 - NPN SILICON RF POWER TRANSISTOR (ASI)
MRF534 - HIGH FREQUENCY TRANSISTOR (Motorola Semiconductor)
MRF536 - HIGH FREQUENCY TRANSISTOR (Motorola Semiconductor)

Other Datasheets by Motorola

Published: Feb 27, 2006 |