MRF187 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTORS

MRF187, RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

Guaranteed Performance @ 880 MHz, 26 Volts Output Power 85 Watt

MRF187 Features

* G DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375