MRF18030BR3 Datasheet (Motorola) - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR

MRF18030BR3, THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

Specified for GSM 1930 1990 MHz.

Typical GSM Performance: Power Gain 14 dB (Typ) @ 30 Watts Efficienc

MRF18030BR3 Features

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